ICTP, Trieste, Italy
We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET) charged by odd/even number of electrons. It is shown that the mechanical motion of mobile quantum impurity with the spin results in the time dependent tunneling width which leads to effective increase of the Kondo temperature. The time-dependent oscillating Kondo temperature changes the scaling behavior of the differential conductance resulting in the suppression of transport in a strong coupling- and its enhancement in a weak coupling regimes. The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible experimental realization of the Kondo shuttling in a spin pumping regime are discussed.